Resistive random access memory (RRAM) cell with a composite capping layer

US9627613B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hai-Dang Trinh · Hsinchu, TW
• Cheng-Yuan Tsai · Taipei, TW
• Hsing-Lien Lin · Hsinchu, TW

Key dates

• Filing date: Mar 20, 2015
• Grant date: Apr 18, 2017
• Expiry date: Mar 20, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive random access memory (RRAM) cell with a composite capping layer is provided. A tantalum oxide based layer is arranged over a bottom electrode layer. The composite capping layer is arranged over and abutting the tantalum oxide based layer. The composite capping layer includes a first metal layer and a second metal layer overlying the first metal layer. The first metal layer is more reactive with the tantalum oxide based layer than the second metal layer. A top electrode layer is arranged over the composite capping layer. A method for manufacturing the RRAM cell is also provided.