Mechanisms for removing debris from polishing pad
US9630295B2 · kind B2 · utility
18Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2013 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Oct 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/304
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Embodiments of mechanisms for performing a chemical mechanical polishing (CMP) process are provided. A method for performing a CMP process includes polishing a wafer by using a polishing pad. The method also includes applying a cleaning liquid jet on the polishing pad to condition the polishing pad. A CMP system is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.