Method to improve cantilever process performance
US9630833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2015 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Sep 24, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/0015
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing a cantilever structure includes providing a semiconductor substrate, forming a recess in the semiconductor substrate, forming a sacrificial layer in the recess, forming a cantilever structure layer on the semiconductor substrate and the sacrificial layer, performing an etching process to remove a portion of the cantilever structure layer until a surface of the sacrificial layer is exposed to form a cantilever structure and an opening, and removing a portion of the sacrificial layer to form a void below the cantilever structure so that the cantilever structure is suspended in the void. The cantilever structure thus formed has good morphological properties to ensure that the cantilever structure is free of residues at the bottom and has excellent suspension even if the width of the cantilever structure is relatively large.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.