Apparatus for dielectric deposition process
US9631273B2 · kind B2 · utility
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3References
19Claims
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Assignee
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Key dates
| Filing date | Jul 25, 2012 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Aug 4, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus comprises a first gas inlet coupled between a first pipe and a reaction chamber, wherein the first pipe configured to carry process gases, a second gas inlet coupled between a second pipe and the reaction chamber, wherein the second pipe configured to carry a precursor material in a gaseous state and a heating device coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the precursor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.