Integration of photonic, electronic, and sensor devices with SOI VLSI microprocessor technology
US9632251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2014 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | May 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/92242
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to an aspect of the present principles, methods are provided for fabricating an integrated structure. A method includes forming a very large scale integration (VLSI) structure including a semiconductor layer at a top of the VLSI structure. The method further includes mounting the VLSI structure to a support structure. The method additionally includes removing at least a portion of the semiconductor layer from the VLSI structure. The method also includes attaching an upper layer to the top of the VLSI structure. The upper layer is primarily composed of a material that has at least one of a higher resistivity or a higher transparency than the semiconductor layer. The upper layer includes at least one hole for at least one of a photonic device or an electronic device. The method further includes releasing said VLSI structure from the support structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.