Semiconductor device capable of attaining ground state in an ising model
US9633715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2013 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | May 31, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
It is an object of the present invention to provide a device which can be easily manufactured and obtain a ground state of an arbitrary Ising model. A semiconductor device includes a first memory cell and a second memory cell that interacts with the first memory cell, in which storage content of the first memory cell and the second memory cell is stochastically inverted. The storage content is stochastically inverted by dropping threshold voltages of the first memory cell and the second memory cell. The threshold voltages of the first and second memory cells are dropping by controlling substrate biases, power voltages, or trip points of the first and second memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.