Tomonori Sekiguchi
123Patents
16h-index
85Co-inventors
89Inventor score
Filing activity: Dec 27, 1996 → Sep 17, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8184463B2 | Semiconductor apparatus | Electricity | 236 | Active |
| US7466577B2 | Semiconductor storage device having a plurality of stacked memory chips | Electricity | 67 | Active |
| US6670642B2 | Semiconductor memory device using vertical-channel transistors | Electricity | 56 | Expired |
| US6335893B1 | Semiconductor integrated circuit device | Electricity | 55 | Expired |
| US6535435B2 | Reference voltage generator permitting stable operation | Electricity | 44 | Expired |
| US5886943A | Semiconductor memory having a hierarchical data line structure | Physics | 32 | Expired |
| US7603592B2 | Semiconductor device having a sense amplifier array with adjacent ECC | Physics | 32 | Active |
| US7098478B2 | Semiconductor memory device using vertical-channel transistors | Electricity | 26 | Expired |
| US7574648B2 | Semiconductor device | Physics | 25 | Active |
| US6756262B1 | Semiconductor integrated circuit device having spaced-apart electrodes and the method thereof | Electricity | 24 | Expired |
| US6407420B1 | Integrated circuit device having line width determined by side wall spacer provided in openings formed in insulating film for connection conductors | Electricity | 22 | Expired |
| US6477100B2 | Semiconductor memory device with over-driving sense amplifier | Physics | 21 | Expired |
| US6501672B1 | Dynamic random access memory (DRAM) capable of canceling out complementary noise developed in plate electrodes of memory cell capacitors | Electricity | 20 | Expired |
| US5910911A | Semiconductor memory and process of operating the same | Physics | 19 | Expired |
| US6097623A | Ferroelectric memory device having two columns of memory cells precharged to separate voltages | Physics | 19 | Expired |
| US6621110B1 | Semiconductor intergrated circuit device and a method of manufacture thereof | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6992343B2 | Semiconductor memory device | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6668344B1 | Semiconductor integrated circuit with memory redundancy circuit | Physics | 14 | Expired |
| US7224629B2 | Memory device having high speed sense amplifier comprising pull-up circuit and pull-down circuits with different drivability for each | Electricity | 14 | Expired |
| US6809364B2 | Semiconductor integrated circuit device and a method of manufacture thereof | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6426889B2 | Semiconductor integrated circuit | Electricity | 12 | Expired |
| US6400596B2 | Semiconductor memory device using open data line arrangement | Electricity | 12 | Expired |
| US6882557B2 | Semiconductor memory device | Electricity | 12 | Expired |
| US6495870B1 | Semiconductor device and method for patterning the semiconductor device in which line patterns terminate at different lengths to prevent the occurrence of a short or break | Electricity | 12 | Expired |
| US7200061B2 | Sense amplifier for semiconductor memory device | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.