Patent · US Active

Method for determining electrical parameters used to programme a resistive random access memory

US9633725B2 · kind B2 · utility

2Cited by
0References
8Claims
0Family size

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Key dates

Filing dateDec 10, 2014
Grant dateApr 25, 2017
Priority date
Expiry dateOct 28, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C13/0035
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method determines electrical parameters for programming a resistive random access memory in an insulating state and in a conducting state, by formation or dissolution of a filament.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.