Method for determining electrical parameters used to programme a resistive random access memory
US9633725B2 · kind B2 · utility
2Cited by
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8Claims
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Key dates
| Filing date | Dec 10, 2014 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Oct 28, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0035
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method determines electrical parameters for programming a resistive random access memory in an insulating state and in a conducting state, by formation or dissolution of a filament.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.