Segmentation of blocks for faster bit line settling/recovery in non-volatile memory devices
US9633742B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2014 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Jul 10, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In non-volatile memory circuits, the amount of time needed for bit lines to settle can vary significantly depending on the location of the blocks selected. For example, in a sensing operation, the amount of time for bit lines to settle when being pre-charged by sense amplifiers will be shorter for blocks near the sense amps than for far side blocks. These variations can be particularly acute in high density memory structures, such as in 3D NAND memory, such as that of the BiCS variety. Rather than use the same timing for all blocks, the blocks can be segmented into groups based on their proximity to the sense amps. When performing a sensing operation, the timing can be adjusted based on the block group to which a selected page of memory cells belongs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.