Method for forming an electrical contact
US9633853B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2015 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Dec 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an electrical contact to a semiconductor structure is provided. The method includes providing a semiconductor structure, providing a metal on an area of said semiconductor structure, wherein said area exposes a semiconductor material and is at least a part of a contact region, converting said metal to a Si-comprising or a Ge-comprising alloy, thereby forming said electrical contact on said area, wherein said converting is done by performing a vapor-solid reaction, whereby said semiconductor structure including said metal is subjected to a silicon-comprising precursor gas or a germanium-comprising precursor gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.