Patent · US Active

Method for forming a transistor structure comprising a fin-shaped channel structure

US9633891B2 · kind B2 · utility

4Cited by

2References

12Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Nadine Collaert · Blanden, BE
Geert Eneman · Heverlee, BE
Naoto Horiguchi · Leuven, BE
Min Soo Kim · Seoul, KR
Rita Rooyackers · Kessel-Lo, BE
Anabela Veloso · Leuven, BE
Liesbeth Witters · Linden, BE

Key dates

Filing date	Oct 28, 2015
Grant date	Apr 25, 2017
Priority date	—
Expiry date	Oct 28, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/115
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An example method includes providing a layer stack in a trench defined by adjacent STI structures and recessing the STI structures adjacent to the layer stack to thereby expose an upper portion of the layer stack, the upper portion comprising at least a channel portion. The method further includes providing one or more protection layers on the upper portion of the layer stack and then further recessing the STI structures selectively to the protection layers and the layer stack, to thereby expose a central portion of the layer stack. And the method includes removing the central portion of the layer stack, resulting in a freestanding upper part and a lower part of the layer stack being physically separated from each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.