FinFET and method of fabricating the same
US9634104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2015 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | May 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a fin field effect transistor (FinFET) includes forming a first fin and a second fin extending upward from a substrate major surface to a first height, forming an insulation layer comprising a top surface extending upward from the substrate major surface to a second height less than the first height, selectively forming a bulbous epitaxial layer covering a portion of each fin, annealing the substrate to convert at least a portion of the bulbous epitaxial layer to silicide and depositing a metal layer at least in the cavity. The first fin and the second fin are adjacent. A portion of the first fin and a portion of the second fin extend beyond the top surface of the insulation layer. The bulbous epitaxial layer defines an hourglass shaped cavity between adjacent fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.