Schottky diode having a well with peripherial cathod regions and center andoe region
US9634154B1 · kind B1 · utility
2Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Oct 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
In some embodiments, a semiconductor device includes a first well region configured to be an anode of the semiconductor device, a first doped region configured to be a cathode of the semiconductor device, a second doped region configured to be another cathode of the semiconductor device, and a conductive region. The first well region is disposed between the first doped region and the second doped region, and is configured for electrical connection of the conductive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.