Magnetic memory devices
US9634240B2 · kind B2 · utility
2Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2014 |
| Grant date | Apr 25, 2017 |
| Priority date | — |
| Expiry date | Dec 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and the first insulating pattern. The first insulating pattern includes a first magnetic element, and the first magnetic element is the same as a second magnetic element constituting the first magnetic patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.