Synthesis and transfer of metal dichalcogenide layers on diverse surfaces
US9637839B2 · kind B2 · utility
2Cited by
3References
19Claims
0Family size
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Key dates
| Filing date | Feb 28, 2014 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Apr 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/58
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Aromatic molecules are seeded on a surface of a growth substrate; and a layer (e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.