Plasma processing apparatus
US9640368B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 13, 2012 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | May 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2242/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma processing apparatus, first to third RF power monitors 94, 94 and 98 are configured to monitor high frequency powers (progressive wave powers), which propagate on first to third high frequency power supply lines 88, 90 and 92 from first to third high frequency power supplies 36, 38 and 40 toward a load side, respectively, and high frequency powers (reflection wave powers), which propagate on the first high frequency power supply lines 88, 90 and 92 from the load side toward the first to third high frequency power supplies 36, 38 and 40, respectively, at the same time. A main controller 82 is configured to control the high frequency power supplies 36, 38 and 40 and matching devices 42, 44 and 46 based on monitoring information sent from RF power monitors 94, 96 and 98.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.