Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, and associated transistor device
US9640411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2015 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Nov 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, the method comprising providing a shallow trench isolation (STI) substrate comprising a silicon protrusion embedded in STI dielectric structures, and partially recessing the silicon protrusion in order to provide a trench in between adjacent STI structures, and to provide a V-shaped groove at an upper surface of the recessed protrusion. The method also includes growing a Si1-xGex SRB layer in the trenches, and growing a germanium based channel layer on the Si1-xGex SRB layer. In this example, the Si1-xGex SRB layer comprises a germanium content x that is within the range of 20% to 99%, and the SRB layer has a thickness less than 400 nm. The present disclosure also relates to an associated transistor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.