Semiconductor devices and methods of fabricating semiconductor devices
US9640443B2 · kind B2 · utility
3Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2016 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | May 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided. A semiconductor device includes a substrate including first through fourth areas. Moreover, first through fourth gate insulating layers are on the first through fourth areas, respectively. Amounts of work function control materials in the first through fourth gate insulating layers, nitrogen concentrations in the first through fourth gate insulating layers, and/or thicknesses of the first through fourth gate insulating layers vary among the first through fourth gate insulating layers. Methods for fabricating semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.