Automated inline inspection of wafer edge strain profiles using rapid photoreflectance spectroscopy
US9640449B2 · kind B2 · utility
3Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2015 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | May 24, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/06113
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Photoreflectance spectroscopy is used to measure strain at or near the edge of a wafer in a production process. The strain measurement is used to anticipate defects and make prospective corrections in later stages of the production process. Strain measurements are used to associate various production steps with defects to enhance later production processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.