Method for bonding metallic contact areas with solution of a sacrificial layer applied on one of the contact areas
US9640510B2 · kind B2 · utility
9Cited by
8References
13Claims
0Family size
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Key dates
| Filing date | Jul 5, 2013 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Jul 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01029
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for bonding of a first, at least partially metallic contact surface of a first substrate to a second, at least partially metallic contact surface of a second substrate, with the following steps, especially the following progression: application of a sacrificial layer which is at least partially, especially predominantly soluble in the material of at least one of the contact surfaces to at least one of the contact surfaces, bonding of the contact surfaces with at least partial solution of the sacrificial layer in at least one of the contact surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.