Semiconductor device having contact pads
US9640542B2 · kind B2 · utility
379Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2016 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Apr 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a stacked structure having first conductive layers stacked stepwise and first insulating layers interposed between the first conductive layers, wherein undercuts are formed under the first conductive layers and each of the first conductive layers includes a first region covered by the first conductive layer and a second region extending from the first region, contact pads coupled to the second regions of the respective first conductive layers, and a liner layer formed on the contact pads and filling the undercuts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.