Stacked multilayer structure and manufacturing method thereof
US9640547B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2016 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Jan 14, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1057
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.