Method of manufacturing a magnetoresistive memory device
US9640584B2 · kind B2 · utility
8Cited by
6References
11Claims
0Family size
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Key dates
| Filing date | Mar 11, 2015 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Mar 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
According to one embodiment, a magnetoresistive memory device, includes a metal buffer layer provided on a substrate, a crystalline metal nitride buffer layer provided on the metal buffer layer, and a magnetoresistive element provided on the metal nitride buffer layer. The metal nitride buffer layer and the metal buffer layer contain a same material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.