Semiconductor device and manufacturing method therefor
US9640624B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 6, 2014 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Jan 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises: a semiconductor device active region; an electrode shape controlling layer disposed on the semiconductor device active region, the electrode shape controlling layer containing aluminum, the content of aluminum being changed in a direction from bottom to up from the semiconductor device active region, an electrode region being disposed on the electrode shape controlling layer, a groove extended toward the semiconductor device active region and penetrating through the electrode shape controlling layer longitudinally being disposed in the electrode region, all or part of a side surface of the groove having a shape corresponding to the content of aluminum in the electrode shape controlling layer; and an electrode disposed in the groove in the electrode region entirely or partially, the electrode having a shape matching with the shape of the groove, a bottom portion of the electrode being contacted with the semiconductor device active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.