Bipolar transistor manufacturing method

US9640631B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Alain Chantre · Seyssinet-Pariset, FR
• Pascal Chevalier · Bellecombe, FR
• Gregory Avenier · Grenoble, FR

Key dates

• Filing date: Dec 15, 2015
• Grant date: May 2, 2017
• Expiry date: Dec 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A method for manufacturing a bipolar transistor, including the steps of: forming a first surface-doped region of a semiconductor substrate having a semiconductor layer extending thereon with an interposed first insulating layer; forming, at the surface of the device, a stack of a silicon layer and of a second insulating layer; defining a trench crossing the stack and the semiconductor layer opposite to the first doped region, and then an opening in the exposed region of the first insulating layer; forming a single-crystal silicon region in the opening; forming a silicon-germanium region at the surface of single-crystal silicon region, in contact with the remaining regions of the semiconductor layer and of the silicon layer; and forming a second doped region at least in the remaining space of the trench.