Semiconductor device and method of manufacturing semiconductor device
US9640651B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 6, 2014 |
| Grant date | May 2, 2017 |
| Priority date | — |
| Expiry date | Oct 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a termination trench surrounding a region in which a plurality of gate trenches is provided; a p-type lower end region being in contact with a lower end of the termination trench; a p-type outer circumference region being in contact with the termination trench from an outer circumferential side and exposed on a surface of the semiconductor device; a plurality of guard ring regions of a p-type provided on an outer circumferential side of the p-type outer circumference region and exposed on the surface; and an n-type outer circumference region separating the p-type outer circumference region from the guard ring regions and separating the guard ring regions from each another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.