Patent · US Active

Method of forming a resonator

US9641153B2 · kind B2 · utility

0Cited by

9References

19Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Thoralf Kautzsch · Dresden, DE
Heiko Froehlich · Radebeul, DE
Mirko Vogt · Dresden, DE
Maik Stegemann · Freital, DE
Thomas Santa · Seeboden, AT
Markus Burian · Villach, AT

Key dates

Filing date	Nov 4, 2015
Grant date	May 2, 2017
Priority date	—
Expiry date	Nov 4, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH03H2009/02496
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A method of forming a resonator by providing a first layer; forming a sacrificial layer on the first layer; forming a capping layer on the sacrificial layer; forming at least one etching aperture in the capping layer; forming at least one additional aperture having a different size than the at least one etching aperture; forming a cavity and releasing a resonator structure within the cavity by removing the sacrificial layer by etching via the at least one etching aperture; sealing the at least one etching aperture; and forming a lining in the at least one additional aperture.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.