Oxide semiconductor depositing apparatus and method of manufacturing oxide semiconductor using the same
US9644270B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Oct 14, 2014 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Oct 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.