PCM memory with margin current addition and related methods
US9646684B1 · kind B1 · utility
5Cited by
3References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 2, 2016 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Aug 2, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0066
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A differential PCM memory may include first and second PCM elements, and a sense amplifier circuit configured to sense a difference between first and second sense currents passing through the first and second PCM elements, respectively, during a sense operation. The differential PCM memory may include a first margin current branch coupled in parallel with the first PCM element and configured to selectively add a first margin current to the first sense current, and a second margin current branch coupled in parallel with the second PCM element and configured to selectively add a second margin current to the second sense current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.