Method of manufacturing semiconductor device
US9646821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Feb 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes processing a substrate accommodated in a process container accommodated in a housing by supplying a process gas onto the substrate; and exhausting the process container using an exhaust system comprising a first exhaust pipe connected to the process container, the first exhaust pipe having circular or oval cross-section perpendicular to an exhausting direction thereof; and a second exhaust pipe connected to the first exhaust pipe, the second exhaust pipe having square or rectangular cross-section perpendicular to the exhausting direction, wherein at least a portion of the second exhaust pipe is disposed within the housing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.