Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US9646869B2 · kind B2 · utility
5Cited by
147References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2010 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Oct 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices including at least one diode over a conductive strap. The semiconductor device may include at least one conductive strap over an insulator material, at least one diode comprising a single crystalline silicon material over a conductive material, and a memory cell on the at least one diode. The at least one diode may be formed from a single crystalline silicon material. Methods of forming such semiconductor devices are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.