Patent · US Active

Semiconductor device having through-substrate vias

US9646930B2 · kind B2 · utility

6Cited by

3References

16Claims

0Family size

Assignee

IMEC · BE

Inventors

Deniz Sabuncuoglu Tezcan · Neerwinden, BE
Yann Civale · Leuven, BE
Bart Swinnen · Holsbeek, BE
Eric Beyne · Heverlee, BE

Key dates

Filing date	Aug 18, 2014
Grant date	May 9, 2017
Priority date	—
Expiry date	Aug 18, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device having through-substrate vias is disclosed. In one aspect, the device includes a substrate having at least one front-end-of-line (FEOL) device and a back-end-of-line (BEOL) comprising a metal pad. The device additionally includes at least one first contact plug contacting the at least one FEOL device and at least one second contact plug underneath the metal pad and in electrical contact therewith. At least one second contact plug has one end contacting the metal pad and has other end contacting a material that is not part of a FEOL device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.