Non-volatile semiconductor storage device
US9646979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2013 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Oct 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To propose a non-volatile semiconductor memory device capable of injecting charge into a floating gate by source side injection even in a single-layer gate structure. In a non-volatile semiconductor memory device (1), while each of the memory transistor (MGA1) and the switch transistor (SGA) is made to have a single-layer gate structure, when a selected memory cell (3a) is turned on by applying a high voltage to one end of a memory transistor (MGA1) from a source line (SL) during data programming and applying a low voltage to one end of the switch transistor (SGA) from a bit line (BL1), a voltage drop occurs in a low-concentration impurity extension region (ET2) in the memory transistor (MGA1) between the source line (SL) and the bit line (BL1) to generate an intense electric field, and charge can be injected into the floating gate (FG) by source side injection using the intense electric field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.