Dummy FinFET structure and method of making same
US9647066B2 · kind B2 · utility
7Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2012 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Mar 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A FinFET device may include a dummy FinFET structure laterally adjacent an active FinFET structure to reduce stress imbalance and the effects of stress imbalance on the active FinFET structure. The FinFET device comprises an active FinFET comprising a plurality of semiconductor fins, and a dummy FinFET comprising a plurality of semiconductor fins. The active FinFET and the dummy FinFET are laterally spaced from each other by a spacing that is related to the fin pitch of the active FinFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.