Silicon carbide semiconductor device
US9647108B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 15, 2014 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Sep 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
Abstract
A silicon carbide semiconductor device includes: a substrate; a drift layer; a current dispersion layer; a base region; a source region; trenches; a gate insulation film; a gate electrode; a source electrode; a drain electrode; and a bottom layer. The current dispersion layer is arranged on the drift layer, and has a first conductive type with an impurity concentration higher than the drift layer. The bottom layer has a second conductive type, is arranged under the base region, covers a bottom of each trench including a corner portion of the bottom of the trench, and has a depth equal to or deeper than the current dispersion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.