Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material
US9647200B1 · kind B1 · utility
14Cited by
7References
12Claims
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Key dates
| Filing date | Dec 7, 2015 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Dec 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures encapsulated in organic photopatternable dielectric material. For example, a method includes forming an MTJ structure on a semiconductor substrate, encapsulating the MTJ structure in a layer of organic photopatternable dielectric material, patterning the layer of organic photopatternable dielectric material to form a contact opening in the layer of organic photopatternable dielectric material to the MTJ structure, and filling the contact opening with metallic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.