Method for etching layer to be etched
US9647206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2014 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | Sep 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a method for etching an etching target layer of a workpiece. The workpiece has a mask on the etching target layer. The etching target layer and the mask are formed from respective materials for which etching efficiency by a plasma of a rare gas having an atomic number greater than an atomic number of argon is higher than etching efficiency for the materials by a plasma of argon gas. The mask is formed from a material having a melting point higher than that of the etching target layer. The method includes (a) exposing the workpiece to a plasma of a first process gas containing a first rare gas having an atomic number greater than the atomic number of argon, and (b) exposing the workpiece to a plasma of a second process gas containing a second rare gas having an atomic number less than the atomic number of argon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.