Method for manufacturing BAW resonators on a semiconductor wafer
US9647625B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 19, 2013 |
| Grant date | May 9, 2017 |
| Priority date | — |
| Expiry date | May 18, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.