Methods for optical proximity correction in the design and fabrication of integrated circuits using extreme ultraviolet lithography
US9651855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2015 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Oct 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of optical proximity correction (OPC) in extreme ultraviolet lithography (EUV) lithography includes providing a patterned layout design including first and second design polygons that correspond with the pre-pattern opening, wherein the first and second design polygons are separated by a separation distance, and correcting the patterned layout design using OPC by generating (1) a third polygon that has dimensions corresponding to a combination of the first and second design polygons and the separation distance and (2) and filled polygon within the third polygon, thereby generating an OPC-corrected patterned layout design. EUV photomasks may be manufactured from the OPC-corrected patterned layout design, and integrated circuits may be fabricated using such EUV photomasks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.