Non-oxide based dielectrics for superconductor devices
US9653398B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2015 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Dec 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a superconductor device is provided. The method includes depositing a non-oxide based dielectric layer over a substrate, depositing a photoresist material layer over the non-oxide based dielectric layer, irradiating and developing the photoresist material layer to form a via pattern in the photoresist material layer, and etching the non-oxide based dielectric layer to form openings in the non-oxide based dielectric layer based on the via pattern. The method further comprises stripping the photoresist material layer, and filling the openings in the non-oxide based dielectric with a superconducting material to form a set of superconducting contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.