Semiconductor device and method of manufacturing the same
US9653400B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2015 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Dec 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device includes a first porous interlayer insulating film having a low dielectric constant and including a first region and a second region, a second interlayer insulating film formed on the first interlayer insulating film in the first region, a plurality of first conductive patterns formed in the second interlayer insulating film such that the plurality of first conductive patterns are spaced apart from each other, at least one second conductive pattern formed in the first interlayer insulating film in the second region and air gaps disposed at lateral sides of the plurality of first conductive patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.