CMOS image sensor and a method of forming the same
US9653513B1 · kind B1 · utility
1Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Apr 8, 2016 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Apr 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A complementary metal-oxide-semiconductor (CMOS) image sensor includes an implant region of a second type formed in a crystalline layer of a first type. A channel of a transfer gate entirely covers the implant region, which partially joins a photodiode, a doped well and a floating diffusion node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.