Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device
US9653538B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 20, 2014 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | May 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate of the silicon on insulator type includes a semi-conducting film disposed on a buried insulating layer which is disposed on an unstressed silicon support substrate. The semi-conducting film includes a first film zone of tensile-stressed silicon and a second film zone of tensile-relaxed silicon. Openings through the buried insulating layer permit access to the unstressed silicon support substrate under the first and second film zones. An N channel transistor is formed from the first film zone and a P channel transistor is formed from the second film zone. The second film zone may comprise germanium enriched silicon forming a compressive-stressed region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.