Nonvolatile memory device and method for manufacturing the same
US9653562B2 · kind B2 · utility
21Cited by
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21Claims
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Key dates
| Filing date | Feb 1, 2016 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Feb 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
Abstract
A nonvolatile memory device includes a pipe gate electrode layer formed over a substrate; a plurality of conductive layers stacked over the pipe gate electrode layer; source lines formed over an uppermost one of the conductive layers; first slits passing through the pipe gate electrode layer at positions overlapping with the source lines, and dividing the pipe gate electrode layer into a plurality of pipe gate electrodes, and second slits passing through the conductive layers at positions different from the first slits, and dividing the conductive layers into a plurality of memory blocks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.