Semiconductor device and method of manufacturing semiconductor device
US9653599B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 31, 2016 |
| Grant date | May 16, 2017 |
| Priority date | — |
| Expiry date | Aug 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
In a front surface of a semiconductor base body, a gate trench is disposed penetrating an n+-type source region and a p-type base region to a second n-type drift region. In the second n-type drift region, a p-type semiconductor region is selectively disposed. Between adjacent gate trenches, a contact trench is disposed penetrating the n+-type source region and the p-type base region, and going through the second n-type drift region to the p-type semiconductor region. A source electrode embedded in the contact trench contacts the p-type semiconductor region at a bottom portion and corner portion of the contact trench, and forms a Schottky junction with the second n-type drift region at a side wall of the contact trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.