Method and apparatus for high voltage device crystal defect detection
US9658278B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2014 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Aug 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device comprises a first layer, a second layer configured to overlap with the first layer at a plurality of positions, a plurality of first layer contacts configured to be selectively activated to test the first layer for a first layer leakage current, and a plurality of second layer contacts configured to be selectively activated to test the second layer for a second layer leakage current. The first layer contacts are arranged on the first layer on a first side and a second side of the plurality of positions at which the second layer overlaps with the first layer. The second layer contacts are arranged on the second layer on a third side and a fourth side of the plurality of positions at which the second layer overlaps with the first layer. A determined first layer leakage current or second layer leakage current is indicative of the presence of a crystal defect in the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.