Contactless damage inspection of perimeter region of semiconductor device
US9658279B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2015 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Oct 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device includes a semiconductor body. The semiconductor body includes an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region. The active semiconductor region has an active surface area, and the perimeter semiconductor region has a perimeter surface area. The power semiconductor device further includes a test structure for contactless testing of the perimeter semiconductor region. The test structure includes an electrically conductive path mounted on the perimeter surface area. The test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.