Substrate processing apparatus and method of manufacturing semiconductor device
US9659767B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2014 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Aug 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.