Method for forming a floating gate in a recess of a shallow trench isolation (STI) region
US9659781B2 · kind B2 · utility
0Cited by
9References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 28, 2014 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Oct 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6894
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a shallow trench isolation (STI) region in a substrate, the STI region comprising an etch stop layer; etching the STI region by a first etch to the etch stop layer to form a recess in the STI region; and forming a floating gate, the floating gate comprising a portion that extends into the recess in the STI region, wherein the etch stop layer separates the portion of the floating gate that extends into the recess in the STI region from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.