Junction barrier Schottky rectifier

US9659927B2 · kind B2 · utility

Assignee

• ABB Schweiz AG · CH

Inventors

• Friedhelm Bauer · Suhr, CH
• Andrei Mihaila · Cambridge, GB

Key dates

• Filing date: Dec 16, 2015
• Grant date: May 23, 2017
• Expiry date: Dec 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A junction barrier Schottky rectifier with first and second drift layer sections, wherein a peak net doping concentration of the first section is at least two times lower than a minimum net doping concentration of the second section. For each emitter region the first section includes a layer which is in contact with the respective emitter region to form a pn-junction between the first section and the respective emitter region, wherein the thickness of this layer in a direction perpendicular to the interface between the first section and the respective emitter region is at least 0.1 μm. The JBS rectifier has a transition from unipolar to bipolar conduction mode at a lower forward bias due to lowering of electrostatic forces otherwise impairing the transport of electrons toward the emitter regions under forward bias conditions, and with reduced snap-back phenomenon.